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Vacuum and Low-Temperature Characteristics of Silicon Oxynitride-Based Bipolar RRAM
This study investigates the switching characteristics of the silicon oxynitride (SiO(x)N(y))-based bipolar resistive random-access memory (RRAM) devices at different operating ambiances at temperatures ranging from 300 K to 77 K. The operating ambiances (open air or vacuum) and temperature affect th...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9030198/ https://www.ncbi.nlm.nih.gov/pubmed/35457909 http://dx.doi.org/10.3390/mi13040604 |