Growth, Electronic and Electrical Characterization of Ge-Rich Ge–Sb–Te Alloy

In this study, we deposit a Ge-rich Ge–Sb–Te alloy by physical vapor deposition (PVD) in the amorphous phase on silicon substrates. We study in-situ, by X-ray and ultraviolet photoemission spectroscopies (XPS and UPS), the electronic properties and carefully ascertain the alloy composition to be GST...

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Detalles Bibliográficos
Autores principales: Díaz Fattorini, Adriano, Chèze, Caroline, López García, Iñaki, Petrucci, Christian, Bertelli, Marco, Righi Riva, Flavia, Prili, Simone, Privitera, Stefania M. S., Buscema, Marzia, Sciuto, Antonella, Di Franco, Salvatore, D’Arrigo, Giuseppe, Longo, Massimo, De Simone, Sara, Mussi, Valentina, Placidi, Ernesto, Cyrille, Marie-Claire, Tran, Nguyet-Phuong, Calarco, Raffaella, Arciprete, Fabrizio
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9031044/
https://www.ncbi.nlm.nih.gov/pubmed/35458046
http://dx.doi.org/10.3390/nano12081340

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9031044/
https://www.ncbi.nlm.nih.gov/pubmed/35458046
http://dx.doi.org/10.3390/nano12081340

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