Novel Step Floating Islands VDMOS with Low Specific on-Resistance by TCAD Simulation

A novel VDMOS with Step Floating Islands VDMOS (S-FLI VDMOS) is proposed for the first time in this letter, in order to optimize the breakdown voltage (BV) and the specific on-resistance (R(on,sp)). The innovative terminal technology of Breakdown Point Transfer (BPT) is applied to S-FLI VDMOS, which...

Descripción completa

Detalles Bibliográficos
Autores principales: Zhao, Dongyan, Wang, Yubo, Chen, Yanning, Shao, Jin, Fu, Zhen, Duan, Baoxing, Liu, Fang, Li, Xiuwei, Li, Tenghao, Yang, Xin, Li, Mingzhe, Yang, Yintang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9031301/
https://www.ncbi.nlm.nih.gov/pubmed/35457878
http://dx.doi.org/10.3390/mi13040573

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9031301/
https://www.ncbi.nlm.nih.gov/pubmed/35457878
http://dx.doi.org/10.3390/mi13040573

Ejemplares similares