Analysis of Nitrogen-Doping Effect on Sub-Gap Density of States in a-IGZO TFTs by TCAD Simulation

In this work, the impact of nitrogen doping (N-doping) on the distribution of sub-gap states in amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) is qualitatively analyzed by technology computer-aided design (TCAD) simulation. According to the experimental characteristics, the numerical simula...

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Detalles Bibliográficos
Autores principales: Zhu, Zheng, Cao, Wei, Huang, Xiaoming, Shi, Zheng, Zhou, Dong, Xu, Weizong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9032452/
https://www.ncbi.nlm.nih.gov/pubmed/35457921
http://dx.doi.org/10.3390/mi13040617

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9032452/
https://www.ncbi.nlm.nih.gov/pubmed/35457921
http://dx.doi.org/10.3390/mi13040617

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