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Analysis of Nitrogen-Doping Effect on Sub-Gap Density of States in a-IGZO TFTs by TCAD Simulation
In this work, the impact of nitrogen doping (N-doping) on the distribution of sub-gap states in amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) is qualitatively analyzed by technology computer-aided design (TCAD) simulation. According to the experimental characteristics, the numerical simula...
Autores principales: | Zhu, Zheng, Cao, Wei, Huang, Xiaoming, Shi, Zheng, Zhou, Dong, Xu, Weizong |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9032452/ https://www.ncbi.nlm.nih.gov/pubmed/35457921 http://dx.doi.org/10.3390/mi13040617 |
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