The Structural Evolution of Semipolar (11−22) Plane AlN Tem-Plate on m-Plane Sapphire Prepared by Sputtering and High Temperature Annealing

In this work, the epitaxial semipolar (11–22) AlN was prepared on nonpolar m-sapphire substrate by combining sputtering and high-temperature annealing. According to our systematic measurements and analysis from XRD, Raman spectra, and AFM, the evolution of crystalline structure and morphology was in...

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Detalles Bibliográficos
Autores principales: Zhang, Fabi, Zhang, Jin, Huang, Lijie, Liu, Shangfeng, Luo, Wei, Kang, Junjie, Liang, Zhiwen, Cao, Jiakang, Zhang, Chenhui, Wang, Qi, Yuan, Ye
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9032474/
https://www.ncbi.nlm.nih.gov/pubmed/35454640
http://dx.doi.org/10.3390/ma15082945

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9032474/
https://www.ncbi.nlm.nih.gov/pubmed/35454640
http://dx.doi.org/10.3390/ma15082945

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