A Strategy for Extracting Full Material Coefficients of AlN Thin Film Based on Resonance Method

AlN thin film is widely used in piezoelectric MEMS devices, and the accurate characterizations of its material coefficients are critical for the optimization of the AlN thin film process and the design of AlN thin-film-based devices. However, it is difficult to extract the material coefficients of A...

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Detalles Bibliográficos
Autores principales: Wang, Chen, Yang, Yang, Qin, Lifeng, Ma, Shenglin, Jin, Yufeng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9032807/
https://www.ncbi.nlm.nih.gov/pubmed/35457818
http://dx.doi.org/10.3390/mi13040513

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9032807/
https://www.ncbi.nlm.nih.gov/pubmed/35457818
http://dx.doi.org/10.3390/mi13040513

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