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Formation of self-assembled Gd(2)O(3) nanowire-like structures during epitaxial growth on Si(001)

The structural and morphological properties of gadolinium oxide (Gd(2)O(3)) grown at high temperatures with molecular beam epitaxy on Si(001) were investigated for different stages of growth. The Gd(2)O(3) layers were grown at 850 °C with different oxygen partial pressures and substrate miscuts. RHE...

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Detalles Bibliográficos
Autores principales: Gribisch, Philipp, Fissel, Andreas
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9033007/
https://www.ncbi.nlm.nih.gov/pubmed/35480161
http://dx.doi.org/10.1039/d1ra00476j