Flexible electric-double-layer thin film transistors based on a vertical InGaZnO(4) channel

Flexible electric-double-layer (EDL) thin film transistors (TFTs) based on a vertical InGaZnO(4) (IGZO) channel are fabricated at room temperature. Such TFTs show a low operation voltage of 1.0 V due to the large specific gate capacitance of 3.8 μF cm(−2) related to electric-double-layer formation....

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Detalles Bibliográficos
Autores principales: Lei, Liuhui, Tan, Yuanyuan, Yuan, Xing, Dou, Wei, Zhang, Jiale, Wang, Yongkang, Zeng, Sizhe, Deng, Shenyi, Guo, Haoting, Zhou, Weichang, Tang, Dongsheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2021
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9033188/
https://www.ncbi.nlm.nih.gov/pubmed/35480189
http://dx.doi.org/10.1039/d1ra02155a

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9033188/
https://www.ncbi.nlm.nih.gov/pubmed/35480189
http://dx.doi.org/10.1039/d1ra02155a

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