Flexible electric-double-layer thin film transistors based on a vertical InGaZnO(4) channel

Flexible electric-double-layer (EDL) thin film transistors (TFTs) based on a vertical InGaZnO(4) (IGZO) channel are fabricated at room temperature. Such TFTs show a low operation voltage of 1.0 V due to the large specific gate capacitance of 3.8 μF cm(−2) related to electric-double-layer formation....

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Autores principales: Lei, Liuhui, Tan, Yuanyuan, Yuan, Xing, Dou, Wei, Zhang, Jiale, Wang, Yongkang, Zeng, Sizhe, Deng, Shenyi, Guo, Haoting, Zhou, Weichang, Tang, Dongsheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2021
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9033188/
https://www.ncbi.nlm.nih.gov/pubmed/35480189
http://dx.doi.org/10.1039/d1ra02155a
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author Lei, Liuhui
Tan, Yuanyuan
Yuan, Xing
Dou, Wei
Zhang, Jiale
Wang, Yongkang
Zeng, Sizhe
Deng, Shenyi
Guo, Haoting
Zhou, Weichang
Tang, Dongsheng
author_facet Lei, Liuhui
Tan, Yuanyuan
Yuan, Xing
Dou, Wei
Zhang, Jiale
Wang, Yongkang
Zeng, Sizhe
Deng, Shenyi
Guo, Haoting
Zhou, Weichang
Tang, Dongsheng
author_sort Lei, Liuhui
collection PubMed
description Flexible electric-double-layer (EDL) thin film transistors (TFTs) based on a vertical InGaZnO(4) (IGZO) channel are fabricated at room temperature. Such TFTs show a low operation voltage of 1.0 V due to the large specific gate capacitance of 3.8 μF cm(−2) related to electric-double-layer formation. The threshold voltage, drain current on/off ratio and subthreshold swing are estimated to be −0.1 V, 1.2 × 10(6) and 80 mV per decade, respectively. The combination of low voltage, high current on-to-off ratio and room temperature processing make the flexible vertical-IGZO-channel TFTs very promising for low-power portable flexible electronics applications.
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spelling pubmed-90331882022-04-26 Flexible electric-double-layer thin film transistors based on a vertical InGaZnO(4) channel Lei, Liuhui Tan, Yuanyuan Yuan, Xing Dou, Wei Zhang, Jiale Wang, Yongkang Zeng, Sizhe Deng, Shenyi Guo, Haoting Zhou, Weichang Tang, Dongsheng RSC Adv Chemistry Flexible electric-double-layer (EDL) thin film transistors (TFTs) based on a vertical InGaZnO(4) (IGZO) channel are fabricated at room temperature. Such TFTs show a low operation voltage of 1.0 V due to the large specific gate capacitance of 3.8 μF cm(−2) related to electric-double-layer formation. The threshold voltage, drain current on/off ratio and subthreshold swing are estimated to be −0.1 V, 1.2 × 10(6) and 80 mV per decade, respectively. The combination of low voltage, high current on-to-off ratio and room temperature processing make the flexible vertical-IGZO-channel TFTs very promising for low-power portable flexible electronics applications. The Royal Society of Chemistry 2021-05-18 /pmc/articles/PMC9033188/ /pubmed/35480189 http://dx.doi.org/10.1039/d1ra02155a Text en This journal is © The Royal Society of Chemistry https://creativecommons.org/licenses/by-nc/3.0/
spellingShingle Chemistry
Lei, Liuhui
Tan, Yuanyuan
Yuan, Xing
Dou, Wei
Zhang, Jiale
Wang, Yongkang
Zeng, Sizhe
Deng, Shenyi
Guo, Haoting
Zhou, Weichang
Tang, Dongsheng
Flexible electric-double-layer thin film transistors based on a vertical InGaZnO(4) channel
title Flexible electric-double-layer thin film transistors based on a vertical InGaZnO(4) channel
title_full Flexible electric-double-layer thin film transistors based on a vertical InGaZnO(4) channel
title_fullStr Flexible electric-double-layer thin film transistors based on a vertical InGaZnO(4) channel
title_full_unstemmed Flexible electric-double-layer thin film transistors based on a vertical InGaZnO(4) channel
title_short Flexible electric-double-layer thin film transistors based on a vertical InGaZnO(4) channel
title_sort flexible electric-double-layer thin film transistors based on a vertical ingazno(4) channel
topic Chemistry
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9033188/
https://www.ncbi.nlm.nih.gov/pubmed/35480189
http://dx.doi.org/10.1039/d1ra02155a
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