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High performance GZO/p-Si heterojunction diodes fabricated by reactive co-sputtering of Zn and GaAs through the control of GZO layer thickness
The effect of thickness of Ga doped ZnO (GZO) layer on the performance of GZO/p-Si heterojunctions fabricated by reactive co-sputtering of Zn–GaAs target is investigated. GZO films were deposited at 375 °C with 0.5% GaAs area coverage of Zn target and 5% O(2) in sputtering atmosphere. X-ray diffract...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9033655/ https://www.ncbi.nlm.nih.gov/pubmed/35479208 http://dx.doi.org/10.1039/d1ra02531g |