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High performance GZO/p-Si heterojunction diodes fabricated by reactive co-sputtering of Zn and GaAs through the control of GZO layer thickness
The effect of thickness of Ga doped ZnO (GZO) layer on the performance of GZO/p-Si heterojunctions fabricated by reactive co-sputtering of Zn–GaAs target is investigated. GZO films were deposited at 375 °C with 0.5% GaAs area coverage of Zn target and 5% O(2) in sputtering atmosphere. X-ray diffract...
Autores principales: | , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
The Royal Society of Chemistry
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9033655/ https://www.ncbi.nlm.nih.gov/pubmed/35479208 http://dx.doi.org/10.1039/d1ra02531g |
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author | Mondal, Praloy Appani, Shravan K. Sutar, D. S. Major, S. S. |
author_facet | Mondal, Praloy Appani, Shravan K. Sutar, D. S. Major, S. S. |
author_sort | Mondal, Praloy |
collection | PubMed |
description | The effect of thickness of Ga doped ZnO (GZO) layer on the performance of GZO/p-Si heterojunctions fabricated by reactive co-sputtering of Zn–GaAs target is investigated. GZO films were deposited at 375 °C with 0.5% GaAs area coverage of Zn target and 5% O(2) in sputtering atmosphere. X-ray diffraction and X-ray photoelectron spectroscopy show that c-axis orientation of crystallites, Ga/Zn ratio and oxygen related defects depend substantially on the thickness of films. The 200–350 nm thick GZO films display low carrier concentration ∼10(17) cm(−3), which increases to >10(20) cm(−3) for thicker films. The diodes fabricated with >500 nm thick GZO layers display non-rectifying behaviour, while those fabricated with 200–350 nm thick GZO layers display nearly ideal rectification with diode factors of 1.5–2.5, along with, turn-on voltage ∼1 V, reverse saturation current ∼10(−5) A, barrier height ∼0.4 eV and series resistance ∼200 Ω. The drastically improved diode performance is attributed to small Ga/Zn ratio (∼0.01) and extremely low dopant activation (∼0.3%), owing to diffusion and non-substitutional incorporation of Ga in thin GZO layers, which cause self-adjustment of doping concentration. These factors, together with c-axis orientation and chemisorbed oxygen at grain boundaries, facilitate ideal diode characteristics, not reported earlier for GZO/p-Si heterojunctions. |
format | Online Article Text |
id | pubmed-9033655 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | The Royal Society of Chemistry |
record_format | MEDLINE/PubMed |
spelling | pubmed-90336552022-04-26 High performance GZO/p-Si heterojunction diodes fabricated by reactive co-sputtering of Zn and GaAs through the control of GZO layer thickness Mondal, Praloy Appani, Shravan K. Sutar, D. S. Major, S. S. RSC Adv Chemistry The effect of thickness of Ga doped ZnO (GZO) layer on the performance of GZO/p-Si heterojunctions fabricated by reactive co-sputtering of Zn–GaAs target is investigated. GZO films were deposited at 375 °C with 0.5% GaAs area coverage of Zn target and 5% O(2) in sputtering atmosphere. X-ray diffraction and X-ray photoelectron spectroscopy show that c-axis orientation of crystallites, Ga/Zn ratio and oxygen related defects depend substantially on the thickness of films. The 200–350 nm thick GZO films display low carrier concentration ∼10(17) cm(−3), which increases to >10(20) cm(−3) for thicker films. The diodes fabricated with >500 nm thick GZO layers display non-rectifying behaviour, while those fabricated with 200–350 nm thick GZO layers display nearly ideal rectification with diode factors of 1.5–2.5, along with, turn-on voltage ∼1 V, reverse saturation current ∼10(−5) A, barrier height ∼0.4 eV and series resistance ∼200 Ω. The drastically improved diode performance is attributed to small Ga/Zn ratio (∼0.01) and extremely low dopant activation (∼0.3%), owing to diffusion and non-substitutional incorporation of Ga in thin GZO layers, which cause self-adjustment of doping concentration. These factors, together with c-axis orientation and chemisorbed oxygen at grain boundaries, facilitate ideal diode characteristics, not reported earlier for GZO/p-Si heterojunctions. The Royal Society of Chemistry 2021-06-01 /pmc/articles/PMC9033655/ /pubmed/35479208 http://dx.doi.org/10.1039/d1ra02531g Text en This journal is © The Royal Society of Chemistry https://creativecommons.org/licenses/by-nc/3.0/ |
spellingShingle | Chemistry Mondal, Praloy Appani, Shravan K. Sutar, D. S. Major, S. S. High performance GZO/p-Si heterojunction diodes fabricated by reactive co-sputtering of Zn and GaAs through the control of GZO layer thickness |
title | High performance GZO/p-Si heterojunction diodes fabricated by reactive co-sputtering of Zn and GaAs through the control of GZO layer thickness |
title_full | High performance GZO/p-Si heterojunction diodes fabricated by reactive co-sputtering of Zn and GaAs through the control of GZO layer thickness |
title_fullStr | High performance GZO/p-Si heterojunction diodes fabricated by reactive co-sputtering of Zn and GaAs through the control of GZO layer thickness |
title_full_unstemmed | High performance GZO/p-Si heterojunction diodes fabricated by reactive co-sputtering of Zn and GaAs through the control of GZO layer thickness |
title_short | High performance GZO/p-Si heterojunction diodes fabricated by reactive co-sputtering of Zn and GaAs through the control of GZO layer thickness |
title_sort | high performance gzo/p-si heterojunction diodes fabricated by reactive co-sputtering of zn and gaas through the control of gzo layer thickness |
topic | Chemistry |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9033655/ https://www.ncbi.nlm.nih.gov/pubmed/35479208 http://dx.doi.org/10.1039/d1ra02531g |
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