Enhanced reliability of phase-change memory via modulation of local structure and chemical bonding by incorporating carbon in Ge(2)Sb(2)Te(5)

In this study, we investigated the effect of phase-change characteristics on the device performance of carbon-incorporated Ge(2)Sb(2)Te(5) (CGST) to understand the origin of the enhanced reliability and stabilization of the device. Macroscopic and microscopic measurements confirmed that the structur...

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Detalles Bibliográficos
Autores principales: Han, Jeong Hwa, Jeong, Hun, Park, Hanjin, Kwon, Hoedon, Kim, Dasol, Lim, Donghyeok, Baik, Seung Jae, Kwon, Young-Kyun, Cho, Mann-Ho
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2021
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9034215/
https://www.ncbi.nlm.nih.gov/pubmed/35480803
http://dx.doi.org/10.1039/d1ra02210e

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9034215/
https://www.ncbi.nlm.nih.gov/pubmed/35480803
http://dx.doi.org/10.1039/d1ra02210e

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