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N(+)-ion implantation induced enhanced conductivity in polycrystalline and single crystal diamond
With the 200 keV N(+)-ion implantation technique and a systematic variation of fluence, we report on the formation of highly conducting n-type diamond where insulator-to-metal transition (IMT) is observed above a certain fluence wherein the conductivity no longer obeys the hopping mechanism of trans...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9036636/ https://www.ncbi.nlm.nih.gov/pubmed/35479784 http://dx.doi.org/10.1039/d1ra03846j |