Nanoscale Mapping of Light Emission in Nanospade-Based InGaAs Quantum Wells Integrated on Si(100): Implications for Dual Light-Emitting Devices

[Image: see text] III–V semiconductors outperform Si in many optoelectronics applications due to their high carrier mobility, efficient light emission and absorption processes, and the possibility to engineer their band gap through alloying. However, complementing Si technology with III–V semiconduc...

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Detalles Bibliográficos
Autores principales: Güniat, Lucas, Tappy, Nicolas, Balgarkashi, Akshay, Charvin, Titouan, Lemerle, Raphaël, Morgan, Nicholas, Dede, Didem, Kim, Wonjong, Piazza, Valerio, Leran, Jean-Baptiste, Tizei, Luiz H. G., Kociak, Mathieu, Fontcuberta i Morral, Anna
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9039963/
https://www.ncbi.nlm.nih.gov/pubmed/35492438
http://dx.doi.org/10.1021/acsanm.2c00507

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9039963/
https://www.ncbi.nlm.nih.gov/pubmed/35492438
http://dx.doi.org/10.1021/acsanm.2c00507

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