Modeling and characterization of stochastic resistive switching in single Ag(2)S nanowires

Chalcogenide resistive switches (RS), such as Ag(2)S, change resistance due to the growth of metallic filaments between electrodes along the electric field gradient. Therefore, they are candidates for neuromorphic and volatile memory applications. This work analyzed the RS of individual Ag(2)S nanow...

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Detalles Bibliográficos
Autores principales: Frick, Nikolay, Hosseini, Mahshid, Guilbaud, Damien, Gao, Ming, LaBean, Thomas H.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9042966/
https://www.ncbi.nlm.nih.gov/pubmed/35474068
http://dx.doi.org/10.1038/s41598-022-09893-4

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9042966/
https://www.ncbi.nlm.nih.gov/pubmed/35474068
http://dx.doi.org/10.1038/s41598-022-09893-4

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