An artificial synaptic transistor using an α-In(2)Se(3) van der Waals ferroelectric channel for pattern recognition

Despite being widely investigated for their memristive behavior, ferroelectrics are barely studied as channel materials in field-effect transistor (FET) configurations. In this work, we use multilayer α-In(2)Se(3) to realize a ferroelectric channel semiconductor FET, i.e., FeS-FET, whose gate-trigge...

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Detalles Bibliográficos
Autores principales: Mohta, Neha, Rao, Ankit, Remesh, Nayana, Muralidharan, R., Nath, Digbijoy N.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2021
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9043574/
https://www.ncbi.nlm.nih.gov/pubmed/35494353
http://dx.doi.org/10.1039/d1ra07728g

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9043574/
https://www.ncbi.nlm.nih.gov/pubmed/35494353
http://dx.doi.org/10.1039/d1ra07728g

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