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Effect of interfacial defects on the electronic properties of MoS(2) based lateral T–H heterophase junctions
The coexistence of semiconducting (2H) and metallic (1T) phases of MoS(2) monolayers has further pushed their strong potential for applications in the next generation of electronic devices based on two-dimensional lateral heterojunctions. Structural defects have considerable effects on the propertie...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9044014/ https://www.ncbi.nlm.nih.gov/pubmed/35498099 http://dx.doi.org/10.1039/d1ra06010d |