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Effect of interfacial defects on the electronic properties of MoS(2) based lateral T–H heterophase junctions

The coexistence of semiconducting (2H) and metallic (1T) phases of MoS(2) monolayers has further pushed their strong potential for applications in the next generation of electronic devices based on two-dimensional lateral heterojunctions. Structural defects have considerable effects on the propertie...

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Detalles Bibliográficos
Autores principales:	Bahmani, Mohammad, Ghorbani-Asl, Mahdi, Frauenheim, Thomas
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	The Royal Society of Chemistry 2021
Materias:	Chemistry
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9044014/ https://www.ncbi.nlm.nih.gov/pubmed/35498099 http://dx.doi.org/10.1039/d1ra06010d

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