UV electroluminescence emissions from high-quality ZnO/ZnMgO multiple quantum well active layer light-emitting diodes

5-period ZnO/Zn(0.9)Mg(0.1)O multiple quantum wells (MQWs) were employed as active layers to fabricate the p-GaN/MQWs/n-ZnO diode by molecular beam epitaxy. It exhibited an efficient UV emission around 370 nm at room temperature. Calculated band structures and carrier distributions showed that elect...

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Detalles Bibliográficos
Autores principales: Chen, Shanshan, Zhan, Tengrun, Pan, Xinhua, He, Haiping, Huang, Jingyun, Lu, Bin, Ye, Zhizhen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2021
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9044243/
https://www.ncbi.nlm.nih.gov/pubmed/35492489
http://dx.doi.org/10.1039/d1ra06685d

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9044243/
https://www.ncbi.nlm.nih.gov/pubmed/35492489
http://dx.doi.org/10.1039/d1ra06685d

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