UV electroluminescence emissions from high-quality ZnO/ZnMgO multiple quantum well active layer light-emitting diodes

5-period ZnO/Zn(0.9)Mg(0.1)O multiple quantum wells (MQWs) were employed as active layers to fabricate the p-GaN/MQWs/n-ZnO diode by molecular beam epitaxy. It exhibited an efficient UV emission around 370 nm at room temperature. Calculated band structures and carrier distributions showed that elect...

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Detalles Bibliográficos
Autores principales: Chen, Shanshan, Zhan, Tengrun, Pan, Xinhua, He, Haiping, Huang, Jingyun, Lu, Bin, Ye, Zhizhen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2021
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9044243/
https://www.ncbi.nlm.nih.gov/pubmed/35492489
http://dx.doi.org/10.1039/d1ra06685d
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author Chen, Shanshan
Zhan, Tengrun
Pan, Xinhua
He, Haiping
Huang, Jingyun
Lu, Bin
Ye, Zhizhen
author_facet Chen, Shanshan
Zhan, Tengrun
Pan, Xinhua
He, Haiping
Huang, Jingyun
Lu, Bin
Ye, Zhizhen
author_sort Chen, Shanshan
collection PubMed
description 5-period ZnO/Zn(0.9)Mg(0.1)O multiple quantum wells (MQWs) were employed as active layers to fabricate the p-GaN/MQWs/n-ZnO diode by molecular beam epitaxy. It exhibited an efficient UV emission around 370 nm at room temperature. Calculated band structures and carrier distributions showed that electrons were restricted to overflow to the p-type layer, and carriers were confined in the high-quality MQWs well layer.
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spelling pubmed-90442432022-04-28 UV electroluminescence emissions from high-quality ZnO/ZnMgO multiple quantum well active layer light-emitting diodes Chen, Shanshan Zhan, Tengrun Pan, Xinhua He, Haiping Huang, Jingyun Lu, Bin Ye, Zhizhen RSC Adv Chemistry 5-period ZnO/Zn(0.9)Mg(0.1)O multiple quantum wells (MQWs) were employed as active layers to fabricate the p-GaN/MQWs/n-ZnO diode by molecular beam epitaxy. It exhibited an efficient UV emission around 370 nm at room temperature. Calculated band structures and carrier distributions showed that electrons were restricted to overflow to the p-type layer, and carriers were confined in the high-quality MQWs well layer. The Royal Society of Chemistry 2021-12-06 /pmc/articles/PMC9044243/ /pubmed/35492489 http://dx.doi.org/10.1039/d1ra06685d Text en This journal is © The Royal Society of Chemistry https://creativecommons.org/licenses/by-nc/3.0/
spellingShingle Chemistry
Chen, Shanshan
Zhan, Tengrun
Pan, Xinhua
He, Haiping
Huang, Jingyun
Lu, Bin
Ye, Zhizhen
UV electroluminescence emissions from high-quality ZnO/ZnMgO multiple quantum well active layer light-emitting diodes
title UV electroluminescence emissions from high-quality ZnO/ZnMgO multiple quantum well active layer light-emitting diodes
title_full UV electroluminescence emissions from high-quality ZnO/ZnMgO multiple quantum well active layer light-emitting diodes
title_fullStr UV electroluminescence emissions from high-quality ZnO/ZnMgO multiple quantum well active layer light-emitting diodes
title_full_unstemmed UV electroluminescence emissions from high-quality ZnO/ZnMgO multiple quantum well active layer light-emitting diodes
title_short UV electroluminescence emissions from high-quality ZnO/ZnMgO multiple quantum well active layer light-emitting diodes
title_sort uv electroluminescence emissions from high-quality zno/znmgo multiple quantum well active layer light-emitting diodes
topic Chemistry
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9044243/
https://www.ncbi.nlm.nih.gov/pubmed/35492489
http://dx.doi.org/10.1039/d1ra06685d
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