Interface chemistry modulation and dielectric optimization of TMA-passivated HfDyO(x)/Ge gate stacks using doping concentration and thermal treatment

In this work, the effects of different Dy-doping concentrations and annealing temperatures on the interfacial chemistry and electrical properties of TMA-passivated HfDyO(x)/Ge gate stacks have been investigated systematically. The microstructural, optical, interfacial chemistry, and electrical chara...

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Detalles Bibliográficos
Autores principales: Wang, Die, He, Gang, Fang, Zebo, Hao, Lin, Sun, Zhaoqi, Liu, Yanmei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2020
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9047114/
https://www.ncbi.nlm.nih.gov/pubmed/35494468
http://dx.doi.org/10.1039/c9ra08335a

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9047114/
https://www.ncbi.nlm.nih.gov/pubmed/35494468
http://dx.doi.org/10.1039/c9ra08335a

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