Surface morphology smoothing of a 2 inch-diameter GaN homoepitaxial layer observed by X-ray diffraction topography

We investigated the surface morphology changes in a 2 inch-diameter, c-plane, free-standing GaN wafer using X-ray diffraction topography in a grazing-incidence geometry. We observed a decrease in the peak intensity and increase in the full width at half maximum of the GaN 112̄4 Bragg peak after the...

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Detalles Bibliográficos
Autores principales: Kim, Jaemyung, Seo, Okkyun, Hiroi, Satoshi, Irokawa, Yoshihiro, Nabatame, Toshihide, Koide, Yasuo, Sakata, Osami
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2020
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9047531/
https://www.ncbi.nlm.nih.gov/pubmed/35494599
http://dx.doi.org/10.1039/c9ra08882b

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9047531/
https://www.ncbi.nlm.nih.gov/pubmed/35494599
http://dx.doi.org/10.1039/c9ra08882b

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