Light response behaviors of amorphous In–Ga–Zn–O thin-film transistors via in situ interfacial hydrogen doping modulation

Thin-film transistors (TFTs) based on amorphous In–Ga–Zn–O (a-IGZO) channels present high mobility, large-area uniformity, mechanical flexibility and photosensitivity, and thus have extensive applicability in photodetectors, wearable devices, etc. However, pure a-IGZO based photosensors only exhibit...

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Detalles Bibliográficos
Autores principales: Wang, Xiao-Lin, Shao, Yan, Wu, Xiaohan, Zhang, Mei-Na, Li, Lingkai, Liu, Wen-Jun, Zhang, David Wei, Ding, Shi-Jin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2020
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9048488/
https://www.ncbi.nlm.nih.gov/pubmed/35497714
http://dx.doi.org/10.1039/c9ra09646a

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9048488/
https://www.ncbi.nlm.nih.gov/pubmed/35497714
http://dx.doi.org/10.1039/c9ra09646a

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