HfS(2)/MoTe(2) vdW heterostructure: bandstructure and strain engineering based on first-principles calculation

In this study, a multilayered van der Waals (vdW) heterostructure, HfS(2)/MoTe(2), was modeled and simulated using density functional theory (DFT). It was found that the multilayers (up to 7 layers) are typical indirect bandgap semiconductors with an indirect band gap varying from 0.35 eV to 0.51 eV...

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Detalles Bibliográficos
Autores principales: Yang, Xinge, Qin, Xiande, Luo, Junxuan, Abbas, Nadeem, Tang, Jiaoning, Li, Yu, Gu, Kunming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2020
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9048521/
https://www.ncbi.nlm.nih.gov/pubmed/35496097
http://dx.doi.org/10.1039/c9ra10087c

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9048521/
https://www.ncbi.nlm.nih.gov/pubmed/35496097
http://dx.doi.org/10.1039/c9ra10087c

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