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HfS(2)/MoTe(2) vdW heterostructure: bandstructure and strain engineering based on first-principles calculation
In this study, a multilayered van der Waals (vdW) heterostructure, HfS(2)/MoTe(2), was modeled and simulated using density functional theory (DFT). It was found that the multilayers (up to 7 layers) are typical indirect bandgap semiconductors with an indirect band gap varying from 0.35 eV to 0.51 eV...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9048521/ https://www.ncbi.nlm.nih.gov/pubmed/35496097 http://dx.doi.org/10.1039/c9ra10087c |