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Facile Au-assisted epitaxy of nearly strain-free GaN films on sapphire substrates
The nearly strain-free GaN films were epitaxially grown successfully on the Au-coated c-plane sapphire substrate by a convenient chemical vapor deposition approach. The growth of GaN single crystalline epitaxial films is a self-patterned process. The morphology, structure, compositions and optical p...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9048728/ https://www.ncbi.nlm.nih.gov/pubmed/35494563 http://dx.doi.org/10.1039/c9ra09689b |