An assessment on crystallization phenomena of Si in Al/a-Si thin films via thermal annealing and ion irradiation

In the present study, crystallization of amorphous-Si (a-Si) in Al/a-Si bilayer thin films under thermal annealing and ion irradiation has been investigated for future solar energy materials applications. In particular, the effect of thickness ratio (e.g. in Al : a-Si, the ratio of the Al and a-Si l...

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Detalles Bibliográficos
Autores principales: Maity, G., Dubey, S., El-Azab, Anter, Singhal, R., Ojha, S., Kulriya, P. K., Dhar, S., Som, T., Kanjilal, D., Patel, Shiv P.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2020
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9049056/
https://www.ncbi.nlm.nih.gov/pubmed/35495262
http://dx.doi.org/10.1039/c9ra08836a

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9049056/
https://www.ncbi.nlm.nih.gov/pubmed/35495262
http://dx.doi.org/10.1039/c9ra08836a

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