Dual-gate low-voltage transparent electric-double-layer thin-film transistors with a top gate for threshold voltage modulation

Dual gate (DG) low-voltage transparent electric-double-layer (EDL) thin-film transistors (TFTs) with microporous-SiO(2) for both top and bottom dielectrics have been fabricated, both dielectrics were deposited by plasma-enhanced chemical vapor deposition (PECVD) at room temperature. The threshold vo...

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Detalles Bibliográficos
Autores principales: Dou, Wei, Tan, Yuanyuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2020
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9049888/
https://www.ncbi.nlm.nih.gov/pubmed/35497837
http://dx.doi.org/10.1039/c9ra10619g

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9049888/
https://www.ncbi.nlm.nih.gov/pubmed/35497837
http://dx.doi.org/10.1039/c9ra10619g

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