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Theoretical study of a p–n homojunction SiGe field-effect transistor via covalent functionalization
p–n homojunctions are superior to p–n heterojunctions in constructing nanoscale functional devices, owing to the excellent crystallographic alignment. We tune the electronic properties of monolayer siligene (SiGe) into p/n-type via the covalent functionalization of electrophilic/nucleophilic dopants...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
The Royal Society of Chemistry
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9049907/ https://www.ncbi.nlm.nih.gov/pubmed/35492202 http://dx.doi.org/10.1039/d0ra01218a |