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Theoretical study of a p–n homojunction SiGe field-effect transistor via covalent functionalization

p–n homojunctions are superior to p–n heterojunctions in constructing nanoscale functional devices, owing to the excellent crystallographic alignment. We tune the electronic properties of monolayer siligene (SiGe) into p/n-type via the covalent functionalization of electrophilic/nucleophilic dopants...

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Detalles Bibliográficos
Autores principales: Zhao, Jianwei, Cheng, Na, Xia, FeiFei, Liu, LianMei, He, Yuanyuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9049907/
https://www.ncbi.nlm.nih.gov/pubmed/35492202
http://dx.doi.org/10.1039/d0ra01218a

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