A Gd-doped HfO(2) single film for a charge trapping memory device with a large memory window under a low voltage

In this study, a performance-enhanced charge trapping memory device with a Pt/Gd-doped HfO(2)/SiO(2)/Si structure has been investigated, where Gd-doped HfO(2) acts as a charge trapping and blocking layer. The device demonstrates a large memory window of 5.4 V under a ±5 V sweeping voltage (360% of t...

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Detalles Bibliográficos
Autores principales: Shen, Yuxin, Zhang, Zhaohao, Zhang, Qingzhu, Wei, Feng, Yin, Huaxiang, Wei, Qianhui, Men, Kuo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2020
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9049949/
https://www.ncbi.nlm.nih.gov/pubmed/35492147
http://dx.doi.org/10.1039/d0ra00034e

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9049949/
https://www.ncbi.nlm.nih.gov/pubmed/35492147
http://dx.doi.org/10.1039/d0ra00034e

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