A Gd-doped HfO(2) single film for a charge trapping memory device with a large memory window under a low voltage

In this study, a performance-enhanced charge trapping memory device with a Pt/Gd-doped HfO(2)/SiO(2)/Si structure has been investigated, where Gd-doped HfO(2) acts as a charge trapping and blocking layer. The device demonstrates a large memory window of 5.4 V under a ±5 V sweeping voltage (360% of the device with pure HfO(2)), which is extremely attractive in low-power applications. In addition, the device also exhibits good retention characteristics with a 24.5% charge loss after the retention time of 1 × 10(5) seconds and robust endurance performance with a 1% degradation after 1 × 10(4) program/erase cycles. It is considered that the high density of defect states and the reduction in the defect energy levels induced by Gd-doping contribute to the performance improvement.