ALD Al(2)O(3) gate dielectric on the reduction of interface trap density and the enhanced photo-electric performance of IGO TFT

The amorphous indium gallium oxide thin film transistor was fabricated using a cosputtering method. Two samples with different gate dielectric layers were used as follows: sample A with a SiO(2) dielectric layer; and sample B with an Al(2)O(3) dielectric layer. The influence of the gate dielectrics...

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Detalles Bibliográficos
Autores principales: Chen, Kuan-Yu, Yang, Chih-Chiang, Huang, Chun-Yuan, Su, Yan-Kuin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2020
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9050226/
https://www.ncbi.nlm.nih.gov/pubmed/35498582
http://dx.doi.org/10.1039/d0ra00123f

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9050226/
https://www.ncbi.nlm.nih.gov/pubmed/35498582
http://dx.doi.org/10.1039/d0ra00123f

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