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ALD Al(2)O(3) gate dielectric on the reduction of interface trap density and the enhanced photo-electric performance of IGO TFT
The amorphous indium gallium oxide thin film transistor was fabricated using a cosputtering method. Two samples with different gate dielectric layers were used as follows: sample A with a SiO(2) dielectric layer; and sample B with an Al(2)O(3) dielectric layer. The influence of the gate dielectrics...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9050226/ https://www.ncbi.nlm.nih.gov/pubmed/35498582 http://dx.doi.org/10.1039/d0ra00123f |