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Cu(i) substituted wurtzite ZnO: a novel room temperature lead free ferroelectric and high-κ giant dielectric
Semiconducting wurtzite ZnO, with the highest incipient piezoelectricity is an attractive alternative choice with doping transition metal ions in the host lattice to develop novel binary ferroelectric materials that can be easily fabricated in any device architecture. Up to 8% Cu(+) ion substitution...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2020
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9050435/ https://www.ncbi.nlm.nih.gov/pubmed/35495353 http://dx.doi.org/10.1039/d0ra00933d |