Spin relaxation induced by interfacial effects in n-GaN/MgO/Co spin injectors

Spin relaxation, affected by interfacial effects, is a critical process for electrical spin injection and transport in semiconductor-based spintronics. In this work, the electrical spin injection into n-GaN via n-GaN/MgO/Co tunnel barrier was realized, and the interface-related spin relaxation was i...

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Detalles Bibliográficos
Autores principales: Liu, Xingchen, Tang, Ning, Fang, Chi, Wan, Caihua, Zhang, Shixiong, Zhang, Xiaoyue, Guan, Hongming, Zhang, Yunfan, Qian, Xuan, Ji, Yang, Ge, Weikun, Han, Xiufeng, Shen, Bo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2020
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9051297/
https://www.ncbi.nlm.nih.gov/pubmed/35497583
http://dx.doi.org/10.1039/d0ra00464b

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9051297/
https://www.ncbi.nlm.nih.gov/pubmed/35497583
http://dx.doi.org/10.1039/d0ra00464b

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