Bistable non-volatile resistive memory devices based on ZnO nanoparticles embedded in polyvinylpyrrolidone

The resistive random access memory (RRAM) devices based on polyvinylpyrrolidone (PVP) and PVP:PVP:zinc oxide nanoparticle (ZnO NP) active layers have bistable electrical switching behavior. Herein, via a series of storage performance tests, it was proved that the ITO/PVP:ZnO/Al device has a higher O...

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Detalles Bibliográficos
Autores principales: Zhang, Hongyan, Zhao, Xiaofeng, Huang, Jiahe, Bai, Ju, Hou, Yanjun, Wang, Cheng, Wang, Shuhong, Bai, Xuduo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2020
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9051947/
https://www.ncbi.nlm.nih.gov/pubmed/35497168
http://dx.doi.org/10.1039/d0ra00667j

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9051947/
https://www.ncbi.nlm.nih.gov/pubmed/35497168
http://dx.doi.org/10.1039/d0ra00667j

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