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Bistable non-volatile resistive memory devices based on ZnO nanoparticles embedded in polyvinylpyrrolidone
The resistive random access memory (RRAM) devices based on polyvinylpyrrolidone (PVP) and PVP:PVP:zinc oxide nanoparticle (ZnO NP) active layers have bistable electrical switching behavior. Herein, via a series of storage performance tests, it was proved that the ITO/PVP:ZnO/Al device has a higher O...
Autores principales: | , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
The Royal Society of Chemistry
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9051947/ https://www.ncbi.nlm.nih.gov/pubmed/35497168 http://dx.doi.org/10.1039/d0ra00667j |
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author | Zhang, Hongyan Zhao, Xiaofeng Huang, Jiahe Bai, Ju Hou, Yanjun Wang, Cheng Wang, Shuhong Bai, Xuduo |
author_facet | Zhang, Hongyan Zhao, Xiaofeng Huang, Jiahe Bai, Ju Hou, Yanjun Wang, Cheng Wang, Shuhong Bai, Xuduo |
author_sort | Zhang, Hongyan |
collection | PubMed |
description | The resistive random access memory (RRAM) devices based on polyvinylpyrrolidone (PVP) and PVP:PVP:zinc oxide nanoparticle (ZnO NP) active layers have bistable electrical switching behavior. Herein, via a series of storage performance tests, it was proved that the ITO/PVP:ZnO/Al device has a higher ON/OFF current ratio and better memory performance than the ITO/PVP/Al device. Moreover, at 13 wt% concentration of ZnO NPs, optimal storage performance was obtained, the switch state current ratio significantly increased, and the threshold voltage obviously decreased. The conduction mechanism of the devices was further discussed. The device having inorganic nanoparticles embedded in the polymer has excellent storage performance, which has potential application value in data storage. |
format | Online Article Text |
id | pubmed-9051947 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | The Royal Society of Chemistry |
record_format | MEDLINE/PubMed |
spelling | pubmed-90519472022-04-29 Bistable non-volatile resistive memory devices based on ZnO nanoparticles embedded in polyvinylpyrrolidone Zhang, Hongyan Zhao, Xiaofeng Huang, Jiahe Bai, Ju Hou, Yanjun Wang, Cheng Wang, Shuhong Bai, Xuduo RSC Adv Chemistry The resistive random access memory (RRAM) devices based on polyvinylpyrrolidone (PVP) and PVP:PVP:zinc oxide nanoparticle (ZnO NP) active layers have bistable electrical switching behavior. Herein, via a series of storage performance tests, it was proved that the ITO/PVP:ZnO/Al device has a higher ON/OFF current ratio and better memory performance than the ITO/PVP/Al device. Moreover, at 13 wt% concentration of ZnO NPs, optimal storage performance was obtained, the switch state current ratio significantly increased, and the threshold voltage obviously decreased. The conduction mechanism of the devices was further discussed. The device having inorganic nanoparticles embedded in the polymer has excellent storage performance, which has potential application value in data storage. The Royal Society of Chemistry 2020-04-13 /pmc/articles/PMC9051947/ /pubmed/35497168 http://dx.doi.org/10.1039/d0ra00667j Text en This journal is © The Royal Society of Chemistry https://creativecommons.org/licenses/by-nc/3.0/ |
spellingShingle | Chemistry Zhang, Hongyan Zhao, Xiaofeng Huang, Jiahe Bai, Ju Hou, Yanjun Wang, Cheng Wang, Shuhong Bai, Xuduo Bistable non-volatile resistive memory devices based on ZnO nanoparticles embedded in polyvinylpyrrolidone |
title | Bistable non-volatile resistive memory devices based on ZnO nanoparticles embedded in polyvinylpyrrolidone |
title_full | Bistable non-volatile resistive memory devices based on ZnO nanoparticles embedded in polyvinylpyrrolidone |
title_fullStr | Bistable non-volatile resistive memory devices based on ZnO nanoparticles embedded in polyvinylpyrrolidone |
title_full_unstemmed | Bistable non-volatile resistive memory devices based on ZnO nanoparticles embedded in polyvinylpyrrolidone |
title_short | Bistable non-volatile resistive memory devices based on ZnO nanoparticles embedded in polyvinylpyrrolidone |
title_sort | bistable non-volatile resistive memory devices based on zno nanoparticles embedded in polyvinylpyrrolidone |
topic | Chemistry |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9051947/ https://www.ncbi.nlm.nih.gov/pubmed/35497168 http://dx.doi.org/10.1039/d0ra00667j |
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