First principles study of Schottky barriers at Ga(2)O(3)(100)/metal interfaces

A low Schottky barrier height (SBH) of metal–semiconductor contact is essential for achieving high performance electronic devices. Based on first principles calculations, we have comprehensively investigated the interfacial properties of β-Ga(2)O(3) (100) with different metals including Mg, Ni, Cu,...

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Detalles Bibliográficos
Autores principales: Xu, Ran, Lin, Na, Jia, Zhitai, Liu, Yueyang, Wang, Haoyuan, Yu, Yifei, Zhao, Xian
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2020
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9052123/
https://www.ncbi.nlm.nih.gov/pubmed/35497154
http://dx.doi.org/10.1039/c9ra09521g

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9052123/
https://www.ncbi.nlm.nih.gov/pubmed/35497154
http://dx.doi.org/10.1039/c9ra09521g

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