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First principles study of Schottky barriers at Ga(2)O(3)(100)/metal interfaces
A low Schottky barrier height (SBH) of metal–semiconductor contact is essential for achieving high performance electronic devices. Based on first principles calculations, we have comprehensively investigated the interfacial properties of β-Ga(2)O(3) (100) with different metals including Mg, Ni, Cu,...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9052123/ https://www.ncbi.nlm.nih.gov/pubmed/35497154 http://dx.doi.org/10.1039/c9ra09521g |