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Bandgap engineering of few-layered MoS(2) with low concentrations of S vacancies
Band-gap engineering of molybdenum disulfide (MoS(2)) by introducing vacancies is of particular interest owing to the potential optoelectronic applications. In this work, systematic density functional theory (DFT) calculations were carried out for few-layered 3R-MoS(2) with different concentrations...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9052433/ https://www.ncbi.nlm.nih.gov/pubmed/35493677 http://dx.doi.org/10.1039/d0ra01676d |