Novel patterned sapphire substrates for enhancing the efficiency of GaN-based light-emitting diodes

In this study, a novel patterned sapphire substrate (PSS) was used to obtain mesa-type light-emitting diodes (LED), which can efficiently reduce the threading dislocation densities. Silicon nitride (Si(3)N(4)) was used as a barrier to form the PSS, replacing the commonly used silicon dioxide (SiO(2)...

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Detalles Bibliográficos
Autores principales: Chao, Szu-Han, Yeh, Li-Hsien, Wu, Rudder T., Kawagishi, Kyoko, Hsu, Shih-Chieh
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2020
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9052885/
https://www.ncbi.nlm.nih.gov/pubmed/35498868
http://dx.doi.org/10.1039/d0ra01900c

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9052885/
https://www.ncbi.nlm.nih.gov/pubmed/35498868
http://dx.doi.org/10.1039/d0ra01900c

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