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Novel patterned sapphire substrates for enhancing the efficiency of GaN-based light-emitting diodes
In this study, a novel patterned sapphire substrate (PSS) was used to obtain mesa-type light-emitting diodes (LED), which can efficiently reduce the threading dislocation densities. Silicon nitride (Si(3)N(4)) was used as a barrier to form the PSS, replacing the commonly used silicon dioxide (SiO(2)...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9052885/ https://www.ncbi.nlm.nih.gov/pubmed/35498868 http://dx.doi.org/10.1039/d0ra01900c |