Device performance limits and negative capacitance of monolayer GeSe and GeTe tunneling field effect transistors

Exploring the device performance limits is meaningful for guiding practical device fabrication. We propose archetype tunneling field effect transistors (TFETs) with negative capacitance (NC) and use the rigorous ab initio quantum transport simulation to explore the device performance limits of the T...

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Detalles Bibliográficos
Autores principales: Xu, Peipei, Liang, Jiakun, Li, Hong, Liu, Fengbin, Tie, Jun, Jiao, Zhiwei, Luo, Jing, Lu, Jing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2020
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9052893/
https://www.ncbi.nlm.nih.gov/pubmed/35493676
http://dx.doi.org/10.1039/d0ra02265a

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9052893/
https://www.ncbi.nlm.nih.gov/pubmed/35493676
http://dx.doi.org/10.1039/d0ra02265a

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