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Device performance limits and negative capacitance of monolayer GeSe and GeTe tunneling field effect transistors
Exploring the device performance limits is meaningful for guiding practical device fabrication. We propose archetype tunneling field effect transistors (TFETs) with negative capacitance (NC) and use the rigorous ab initio quantum transport simulation to explore the device performance limits of the T...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9052893/ https://www.ncbi.nlm.nih.gov/pubmed/35493676 http://dx.doi.org/10.1039/d0ra02265a |