SiO(2) thin film growth through a pure atomic layer deposition technique at room temperature

In this study, less contaminated and porous SiO(2) films were grown via ALD at room temperature. In addition to the well-known catalytic effect of ammonia, the self-limitation of the reaction was demonstrated by tuning the exposure of SiCl(4), NH(3) and H(2)O. This pure ALD approach generated porous...

Descripción completa

Detalles Bibliográficos
Autores principales: Arl, D., Rogé, V., Adjeroud, N., Pistillo, B. R., Sarr, M., Bahlawane, N., Lenoble, D.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2020
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9053598/
https://www.ncbi.nlm.nih.gov/pubmed/35517241
http://dx.doi.org/10.1039/d0ra01602k

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9053598/
https://www.ncbi.nlm.nih.gov/pubmed/35517241
http://dx.doi.org/10.1039/d0ra01602k

Ejemplares similares