SiO(2) thin film growth through a pure atomic layer deposition technique at room temperature

In this study, less contaminated and porous SiO(2) films were grown via ALD at room temperature. In addition to the well-known catalytic effect of ammonia, the self-limitation of the reaction was demonstrated by tuning the exposure of SiCl(4), NH(3) and H(2)O. This pure ALD approach generated porous...

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Detalles Bibliográficos
Autores principales: Arl, D., Rogé, V., Adjeroud, N., Pistillo, B. R., Sarr, M., Bahlawane, N., Lenoble, D.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2020
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9053598/
https://www.ncbi.nlm.nih.gov/pubmed/35517241
http://dx.doi.org/10.1039/d0ra01602k
Descripción
Sumario:In this study, less contaminated and porous SiO(2) films were grown via ALD at room temperature. In addition to the well-known catalytic effect of ammonia, the self-limitation of the reaction was demonstrated by tuning the exposure of SiCl(4), NH(3) and H(2)O. This pure ALD approach generated porous oxide layers with very low chloride contamination in films. This optimized RT-ALD process could be applied to a wide range of substrates that need to be 3D-coated, similar to mesoporous structured membranes.

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