A comprehensive investigation of MoO(3) based resistive random access memory

The bipolar resistive switching of molybdenum oxide is deliberated while molybdenum and nickel are used as bottom and top electrodes, respectively, to present a device with resistive random access memory (RRAM) characteristics. For the trilayered structure, the SET voltage lies around 3.3 V and RESE...

Descripción completa

Detalles Bibliográficos
Autores principales: Fatheema, Jameela, Shahid, Tauseef, Mohammad, Mohammad Ali, Islam, Amjad, Malik, Fouzia, Akinwande, Deji, Rizwan, Syed
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2020
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9054044/
https://www.ncbi.nlm.nih.gov/pubmed/35515462
http://dx.doi.org/10.1039/d0ra03415k

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9054044/
https://www.ncbi.nlm.nih.gov/pubmed/35515462
http://dx.doi.org/10.1039/d0ra03415k

Ejemplares similares