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A comprehensive investigation of MoO(3) based resistive random access memory
The bipolar resistive switching of molybdenum oxide is deliberated while molybdenum and nickel are used as bottom and top electrodes, respectively, to present a device with resistive random access memory (RRAM) characteristics. For the trilayered structure, the SET voltage lies around 3.3 V and RESE...
Autores principales: | Fatheema, Jameela, Shahid, Tauseef, Mohammad, Mohammad Ali, Islam, Amjad, Malik, Fouzia, Akinwande, Deji, Rizwan, Syed |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
The Royal Society of Chemistry
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9054044/ https://www.ncbi.nlm.nih.gov/pubmed/35515462 http://dx.doi.org/10.1039/d0ra03415k |
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